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漏区

网络drain; s d regions; of a field-effect transistor

漏区

漏区

drain

...的，两端是重掺杂的N区，称为源区（Source）和漏区(Drain)，中间的部分覆盖了一层薄薄的氧化层，其上又制作了多晶硅的 …

s d regions

电器电子英语词汇(S) ... s/n ratio 随机杂波信杂比 s d regions 源漏区 s type characteristic s 型特性曲线 ...

of a field-effect transistor

微电子... ... (of a film integrated circuit) 厚膜 (膜集成电路的) (of a field-effect transistor) 漏区 (场效应晶体管的) ...

1

A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.

源区和漏区形成在鳍部内栅极的相对侧处。

2

The symmetrical light adulteration areas between the heavy adulteration area and the trench area are self-aligned with the grid electrode .

源漏区的重掺杂区与沟道区之间存在与栅电极自对准的且对称的轻掺杂区；

4

The drain region includes an alternating-doping profile region .

漏区包含一交替掺杂形态区域。

5

implanting plasma into the grid , the source region and the drain region which achieves non-crystallization of the surface ;

对所述栅极、源区和漏区进行等离子体注入，使表面达到非晶化；

6

depositing metals on the surface of the grid, the source region and the drain region ;

在所述栅极、源区和漏区表面淀积金属；

7

a grid disposed in the source region and the drain region , wherein the grid and the substrate is separated by a grid oxidizing layer ;

布置在所述源区和所述漏区的栅极，且所述栅极与所述衬底被栅极氧化层隔开；

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