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层错

网络stacking fault; stacking faults; OSF

层错

层错

stacking fault

微电子学英语_百度百科 ... Sputter 溅射 Stacking fault 层错 Static characteristic 静态特性 ...

stacking faults

...es）、相界(phase boundaries)及层错(stacking faults)等均属于这一类。

OSF

硅单晶中的层错有外延层错和热氧化层错(OSF)两类。外延层错既有本征层错也有非本征层错;热氧化层错分为面层错(OSFS， …

OISF

氧化诱发层错（OISF）是这种过量点缺陷（即硅自间隙）存在的区域，通过吸杂区域的空位来吸收过量的自间隙，便会使OISF …

fault planes

...没有观察到明显的位错(dislocations)，层错(fault planes)或孪晶(twinning)现象，确证所得到的是完美介孔单晶。

second kind intrinsic fault

符合 hcp 晶体中的 Shockley 不全位错是由切变造成的 I2 型层错（second kind intrinsic fault）的边界线的界定[3]。由此可以确 …

1

Hence the connotation of uplifted layers of soil, interwoven with one another, which was the inspiration for the form of the house .

住宅造型的灵感来源于上升的土壤层错层交织在一起所形成的形态。

2

The results showed that the dislocation density was very high in as-melt alloy with a small amount of stacking fault and twin .

分析结果表明，铸态合金中含有少量的层错和孪晶，但位错密度较高。

3

Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit 's electrical performance .

晶体缺陷 -部分晶体包含的、会影响电路性能的空隙和层错。

4

The displacement vectors of the stacking faults were determined by the disappearing image laws of the faults .

根据层错的消像规律，确定了各个层错的位移矢量。

5

The stacking fault energy (SFE) and the crystal structure of the targets are regarded to be two main important influencing factors .

总结得出靶材的层错能和晶体结构是影响微带出现几率的主要因素；

6

It shows that the stacking faults in the alloy have not a remarkable effect of trapping positrons .

结果表明，该合金中的层错在实验误差范围内对正电子没有捕获效应。

8

Because the stacking fault energy(SFC) of tantalum is high , the dislocation cross slips easily which can lower the dislocation density .

其原因可能是因为钽的层错能高，位错容易交滑移，使位错密度降低。

10

Structural characterization of stacking faults for nickel hydroxide

氢氧化镍电极材料的层错结构表征

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