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发射极

na.emitter; emitting electrode
网络E; dynode; emtting electrode

发射极

英-汉网络释义

发射极

emitter

电气类专业常用英语词汇1000个_百度文库 ... cathode 阴极 62. emitter 发射极 64. schematic （电路）原理图符号 65. ...

emitting electrode

电子专业词汇表_百度文库 ... Source electrode 源极 Emitting electrode 发射极 Direct Current 直流 ...

emitter, E

发射极（emitter, E）、基极（base, B）和集电极（collector, C）评论| ABS的全名是Anti-lock Brake System（防锁死制动系统…

dynode

这表面是由高电阻的材料构成，为连续式的二次发射极 (dynode)。最后增强的电子讯号通常由一个阳极收集，或是打在磷光屏 …

emtting electrode

航海及海运专业英语词汇(E3) ... emtting cathode 发射阴极 emtting electrode 发射极 emtting 发射的放射的 ...

LDSE

新南威尔士大学的激光掺杂选择性发射极(LDSE)专利技术不断吸引着一批又一批的商业合作伙伴，其中一个原因便是制造商只 …

transmitter

converter模数转换器amplifier放大器 -... ... transistor 晶体管 transmitter 发射极 trial-and-error 试错法 ...

例句：

We have been considering the transistor with a current fed into the emitter .

我们所研究的晶体管都是把电流馈入发射极。

emitter continuum states and emitter quasi-bound states on an equal footing .

连续发射国和发射极准约束各国在平等的基础上。

These emitting electrodes are a result of etching process instead of acid pickling , and are hence even reliable .

这些发射极是刻出的，不是酸洗的，因此器件更可靠。

The density of holes in the base is less than the density of free electrons in the emitter and collector .

基极中空穴的密度小于发射极和集电极中自由电子的密度。

Through a third resistance , emitter is connected to ground.

发射极经由一第三电阻接地；

Features : Low collector emitter saturation voltage VCE(sat).

特点：集电极 -发射极饱和压降低。

A transistor has three electrodes , the emitter , the base and the collector .

晶体管有三个电极，即发射极，基极和集电极。

The common emitter configuration is by far the most versatile and widely used.

目前共发射极接法用途最多，应用最广。

Consequently , no load current flows through R6 because Q2, whose base -emitter voltage is now 0V, has turned off .

由于 Q2 的基极 -发射极的电压为 0V 而截止，因此没有负载电流流过 R6 。

Fig 1 The dark I-V performance of selective emitter and conventional solar cells

图 1 选择性发射极和普通电池的暗 I-V 特性

A Study of DC Characteristics of Transistors with Polysilicon Emitters

多晶硅发射极晶体管直流特性研究

Recent Progress of Theoretical Research on the Edge-crowding-effect of Emitter Current in a Transistor

晶体管发射极电流集边效应理论研究的新进展

Technology Design and Computer Simulationof Polysilicon Emitter Bipolar Transistors

多晶硅发射极双极晶体管的工艺设计及计算机模拟

Super High Speed Polysilicon Emitter Integrated Circuit Technology

多晶硅发射极超高速集成电路工艺

Research on wet etching technique for SiGe HBT emitter mesa formation

发射极台面湿法腐蚀技术研究

the etch of polysilicon emitter bipolar technology

技术中多晶发射极的腐蚀

发射极

发射极